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US 12,217,956 B2Granted
Carbon film deposition method and deposition apparatus
AssigneeTokyo Electron Limited
InventorsYosuke Watanabe, Shota Chida
Life of this patent
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Abstract
A carbon film deposition method includes supplying a carbon-containing gas and a halogen gas to a substrate to deposit a carbon film on the substrate by using chemical vapor deposition, and supplying a gas that reacts with halogens constituting the halogen gas to reduce the halogens contained in the carbon film. A cycle including the supplying of the carbon-containing gas and the halogen gas and the supplying of the gas that reacts with the halogens is repeated a plurality of times.
Claims12
A carbon film deposition method comprising:
- supplying a carbon-containing gas and a halogen gas to a substrate to deposit a carbon film on the substrate by using chemical vapor deposition;
- and
- supplying a gas that reacts with halogens constituting the halogen gas to reduce the halogens contained in the carbon film;
- wherein a cycle is repeated a plurality of times, the cycle including the supplying of the carbon-containing gas and the halogen gas and the supplying of the gas that reacts with the halogens.
1 more element
A carbon film deposition apparatus comprising:
- a processing chamber;
- a substrate holding member provided in the processing chamber;
- a process gas supply configured to supply a carbon-containing gas and a halogen gas to the substrate holding member;
- and
- a halogen reaction gas supply configured to supply a gas that reacts with halogens constituting the halogen gas.
2 more elements
Dependencies are inferred from the claim text.