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US 12,217,946 B2Granted
Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-CAT
AssigneeASM IP Holding B.V.
InventorTaku Omori
Life of this patent
Estimating the term…
Abstract
Examples of a method of manufacturing a semiconductor device includes, in treatment of a substrate with the use of a plasma, acquiring an RF waveform from a reactor through an Ether CAT in real time, the RF waveform being a waveform relating to an electric power to be applied to an RF plate, and adjusting, by using the RF waveform, the electric power to be applied to the RF plate.
Claims8
A method of manufacturing a semiconductor device, comprising:
- in treatment of a substrate with the use of a plasma, acquiring an RF waveform from a reactor through an Ether CAT in real time, the RF waveform being a waveform relating to an electric power to be applied to an RF plate;
- and
- adjusting, by using the RF waveform, the electric power to be applied to the RF plate.
Dependencies are inferred from the claim text.