Substrate processing apparatus and electrostatic chuck

A substrate processing apparatus, comprising:

• a chamber;
• a substrate support which is arranged in the chamber and has at least one first gas supply path;
• and
• at least one control valve configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path, wherein:
• the substrate support includes a base, and an electrostatic chuck which is arranged on the base and has an upper surface;
• the upper surface has a plurality of protrusions and a first annular groove group;
• the first annular groove group comprises a first inner annular groove, a first intermediate annular groove, and a first outer annular groove;
• and
• any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicates with the at least one first gas supply path;
• wherein the substrate support further has at least one second gas supply path;
• the upper surface of the electrostatic chuck further has a second annular groove group surrounding the first annular groove group;
• the second annular groove group comprises a second inner annular groove, a second intermediate annular groove, and a second outer annular groove;
• any one of the second inner annular groove, the second intermediate annular groove, and the second outer annular groove communicates with the at least one second gas supply path;
• and
• the at least one control valve is configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path and the at least one second gas supply path;
• and
• the substrate support further has at least one third gas supply path;
• the upper surface of the electrostatic chuck further has a third annular groove group surrounding the second annular groove group;
• the third annular groove group comprises a third inner annular groove and a third outer annular groove;
• any one of the third inner annular groove and the third outer annular groove communicates with the at least one third gas supply path;
• and
• the at least one control valve is configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path, the at least one second gas supply path, and the at least one third gas supply path.