Radio frequency source for inductively coupled and capacitively coupled plasmas in substrate processing chambers

A method of using a single Radio-Frequency (RF) source to generate inductively coupled plasmas and capacitively coupled plasmas in plasma processing chambers, the method comprising:

• receiving an indication of a plasma process to be performed on a substrate in a plasma processing chamber;
• causing an RF source to generate a first RF signal configured to generate a capacitively coupled plasma in the plasma processing chamber during the plasma process performed on the substrate;
• receiving an indication of a cleaning process to be performed in the plasma processing chamber;
• and
• causing the RF source to generate a second RF signal configured to generate an inductively coupled plasma in the plasma processing chamber during the cleaning process.

One or more non-transitory computer-readable media comprising instructions that, when executed by one or more processors, cause the one or more processors to perform operations comprising:

• receiving an indication of a plasma process to be performed on a substrate in a plasma processing chamber;
• causing a Radio-Frequency (RF) source to generate a first RF signal configured to generate a capacitively coupled plasma in the plasma processing chamber during the plasma process performed on the substrate;
• receiving an indication of a cleaning process to be performed in the plasma processing chamber;
• and
• causing the RF source to generate a second RF signal configured to generate an inductively coupled plasma in the plasma processing chamber during the cleaning process.