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AssigneeTokyo Electron Limited
InventorsYa-Ming Chen, Shyam Sridhar, Peter Lowell George Ventzek, Alok Ranjan
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A plasma processing method includes generating a plasma within a processing chamber using source power to ignite a glow phase of the plasma, generating low-energy ions at a substrate supported by a substrate holder in the processing chamber from the plasma using lower-frequency radio frequency bias power applied during the glow phase, and generating high-energy ions at the substrate using higher-frequency radio frequency bias power applied during an afterglow phase of the plasma. The frequency of the higher-frequency radio frequency bias power is greater than the frequency of the lower-frequency radio frequency bias power.
A plasma processing method comprising:
A plasma etching method comprising:
A plasma processing method comprising etching a substrate supported by a substrate holder within a processing chamber by cyclically performing a periodic process comprising the following steps:
Dependencies are inferred from the claim text.