Drive circuit and memory device
AssigneeChangxin Memory Technologies, Inc.
InventorsZhonglai Liu, Xianjun Wu, Anping Qiu
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AssigneeChangxin Memory Technologies, Inc.
InventorsZhonglai Liu, Xianjun Wu, Anping Qiu
Estimating the term…
The disclosed driver and memory include: a phase driver that receives a first voltage signal, configured to output a second phase signal according to the first phase signal and the first voltage signal; a complementary phase driver includes: a first inverter for generating a complementary inverted phase signal based on a first complementary phase signal, the first phase signal and the first complementary phase signal are mutually inverted; a second inverter for receiving an output signal of the first inverter and a second voltage signal, the voltage value of the second voltage signal is smaller than that of the first voltage signal, and the second inverter is configured to be based on the first complementary inverted phase signal, and the second voltage signal outputs a second complementary phase signal. The driver of the embodiment provides the second phase signal and the second complementary phase signal.
A driver, characterized in that, comprising:
Dependencies are inferred from the claim text.