Memory device and method of forming the same

A memory device, comprising:

• a memory cell array comprising:
• first word line branches connected together through a first common connection and disposed on a first level of the memory cell array, the first word line branches extending in a first direction, and the first common connection extending in a second direction different from the first direction;
• second word line branches connected together through a second common connection and disposed on a second level of the memory cell array, the second word line branches extending in the second direction, and the second common connection extending in the first direction;
• bit lines extending in a third direction different from the first and second directions and passing through the first and second levels of the memory cell array.

A memory device, comprising:

• a memory cell array comprising:
• first word lines disposed on a first level of the memory cell array;
• second word lines disposed on a second level of the memory cell array, each of the second word lines comprising overlapping regions interleaved with non-overlapping regions, wherein each of the overlapping regions overlaps one of the first word lines;
• and
• bit lines extending through the first and second levels of the memory cell array, and the bit lines adjoining the non-overlapping region, wherein the first and second levels are stacked upon one another in a height direction of the bit lines.