Techniques for threshold voltage scans

A non-transitory computer-readable medium storing code comprising instructions which, when executed by one or more processors of an electronic device, cause the electronic device to:

• receive a configuration for scanning a memory array during a scanning procedure;
• read, during the scanning procedure, one or more memory cells of the memory array using a first voltage value of a plurality of incremental voltage values that are in accordance with the configuration;
• store, during the scanning procedure, a first value in a first counter in response to reading the one or more memory cells of the memory array, the first value corresponding to a first quantity of memory cells of the memory array;
• and
• determine whether to terminate the scanning procedure in accordance with one or both of whether the first quantity of memory cells satisfies a threshold quantity of memory cells or whether the first voltage value satisfies a threshold voltage value associated with the one or more memory cells.

A method by a memory system, comprising:

• receiving a configuration for scanning a memory array during a scanning procedure;
• reading, during the scanning procedure, one or more memory cells of the memory array using a first voltage value of a plurality of incremental voltage values that are in accordance with the configuration;
• storing, during the scanning procedure, a first value in a first counter in response to reading the one or more memory cells of the memory array, the first value corresponding to a first quantity of memory cells of the memory array;
• and
• determining whether to terminate the scanning procedure in accordance with one or both of whether the first quantity of memory cells satisfies a threshold quantity of memory cells or whether the first voltage value satisfies a threshold voltage value associated with the one or more memory cells.