Reference voltage generating circuit and semiconductor memory device

A semiconductor memory device comprising:

• a memory cell that stores data;
• a bit line that transmits a signal read from the memory cell;
• and
• a sense amplifier circuit that detects data stored in the memory cell on a basis of the signal transmitted through the bit line,
• wherein the sense amplifier circuit comprises:
• a sense amplifier that compares the signal transmitted through the bit line with a reference voltage and outputs a data detection signal;
• and
• a reference current generating circuit that generates and outputs a reference current control voltage;
• a sense timing generating circuit that controls timing at which a sense amplifier enable signal, for enabling the sense amplifier, is output from an output terminal on a basis of the reference current control voltage;
• and
• a reference voltage generating circuit comprising an original reference voltage generating unit that generates an original reference voltage and a reference voltage correcting unit that decreases the original reference voltage as a temperature rises and outputs the original reference voltage that is decreased as the reference voltage.