Non-volatile memory device, storage device including the same, and operating method thereof

An operating method in a storage device having a non-volatile memory device and a controller controlling the non-volatile memory device, comprising:

• performing a power-up operation by supplying power;
• selecting an application usage after the power-up operation;
• reading initial data according to the application usage;
• and
• setting a register of the non-volatile memory device with the read initial data,
• wherein the reading initial data according to the application usage comprises:
• reading first initial data related to a core operation from the non-volatile memory device;
• and
• reading and updating second initial data, corresponding to the core operation, according to the application usage from the non-volatile memory device,
• wherein one of the first initial data or the second initial data comprises at least one performance parameter related to an operation time of at least one memory operation,
• wherein the other of the first initial data or the second initial data comprises at least one reliability parameter related to at least one of retention, endurance, voltage or verification of the at least one memory operation,
• wherein one of the first initial data or the second initial data is provided in common, and the other of the first initial data or the second initial data is selectable by a user.

A non-volatile memory device comprising:

• a memory cell array having a plurality of memory blocks having a plurality of memory cells connected to a plurality of word-lines and a plurality of bit-lines;
• a row decoder configured to select a memory block, among the plurality of memory blocks, in response to an address;
• a voltage generator configured to apply word-line voltages corresponding to a selected word-line and unselected word-lines, among the plurality of word-lines;
• page buffers connected to the plurality of bit-lines and reading data from memory cells connected to the selected word-line of the selected memory block among the plurality of memory blocks;
• and
• control logic configured to control the row decoder, the voltage generator, and the page buffers,
• wherein at least one memory block, among the plurality of memory blocks, comprises a first region configured to store first initial data, and second regions configured to store second initial data, different from each other, and
• wherein the control logic is configured to read the first initial data stored in the first region and the second initial data stored in a second region, among the second regions, according to an initialization operation request, store the first initial data in an initialization register, and to store and update the second initial data in at least a portion of the initialization register,
• wherein one of the first initial data or the second initial data comprises at least one performance parameter related to an operation time of the non-volatile memory device,
• wherein the other of the first initial data or the second initial data comprises at least one reliability parameter related to at least one of retention, endurance, voltage or verification of the non-volatile memory device,
• wherein one of the first initial data or the second initial data is provided in common, and the other of the first initial data or the second initial data is selectable by a user.