Current steering in reading magnetic tunnel junction

A circuit, comprising:

• a magnetic tunnel junction structure;
• a first field effect transistor having a first source or drain node and a first gate node, the first source or drain node being coupled to a sensing path and the first gate node being coupled to a read path that includes the magnetic tunnel junction structure;
• and
• a sensing circuitry configured to evaluate a signal in the sensing path with respect to a reference signal.

An apparatus, comprising:

• a memory cell including a magnetic tunnel junction unit having a reference layer, a free layer and a tunneling barrier layer sandwiched between the reference layer and the free layer, the memory cell storing a logic state as a magnetization orientation of the free layer;
• a first current steering device configured to enable a first current to flow through a first path including the magnetic tunnel junction and to enable a second current to be steered away from the first path, the second current being proportional to the first current;
• and
• comparator circuitry configured to evaluate the second current with respect to a reference current.