Method for correcting mask pattern, apparatus for correcting mask pattern and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• providing a wafer to be processed, wherein a structural layer of a surface of the wafer to be processed is a photoresist layer;
• placing a mask on the photoresist layer to acquire a component to be exposed, wherein a pattern of the mask is acquired with a process for correcting a mask pattern;
• exposing the component to be exposed;
• and
• developing an exposed wafer;
• wherein the process for correcting the mask pattern comprises:
• acquiring an initial pattern of a mask, the initial pattern comprising a scribe line area and die areas which are spaced, wherein the scribe line area is located between two adjacent die areas, each of the die areas comprises at least one die sub-area and at least one first sub-test element group (TEG) area, and the scribe line area comprises scribe line sub-areas and second sub-TEG areas, the first sub-TEG area and the second sub-TEG area are adjacent to each other, and the first sub-TEG area and the second sub-TEG area constitute a TEG area;
• and
• performing an optical proximity correction on an area of the initial pattern excluding TEG areas, so as to acquire a final pattern.