Exposure system, laser control parameter production method, and electronic device manufacturing method

A method of producing a laser control parameter, the method being executed by a processor,

• the laser control parameter being a control parameter of a pulse laser beam with which a reticle of an exposure system configured to perform scanning exposure of a semiconductor substrate is irradiated, the control parameter including at least one of a wavelength and a spectrum line width,
• the method comprising:
• calculating, by the processor, a proximity effect characteristic corresponding to each of a first region and a second region of the reticle,
• determining, by the processor, based on a result of the calculation, a value of the control parameter of the pulse laser beam with which a difference of the proximity effect characteristic of each of the regions from a reference proximity effect characteristic is in an allowable range, and
• storing, by the processor, the determined value of the control parameter in a file in association with a corresponding one of the regions.

An electronic device manufacturing method comprising performing scanning exposure of a photosensitive substrate by irradiating a reticle with a pulse laser beam by using an exposure system to manufacture an electronic device, the exposure system including

• a laser apparatus configured to emit the pulse laser beam,
• an illumination optical system through which the pulse laser beam is guided to the reticle,
• a reticle stage configured to move the reticle, and
• a processor configured to control emission of the pulse laser beam from the laser apparatus and movement of the reticle by the reticle stage,
• the reticle having a first region and a second region,
• the processor being configured to instruct the laser apparatus about, based on a proximity effect characteristic corresponding to each of the first region and the second region, a value of a control parameter of the pulse laser beam corresponding to each of the regions so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each of the regions from a reference proximity effect characteristic is in an allowable range, and the control parameter includes at least one of a wavelength and a spectrum line width.