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US 12,216,153 B2Granted
Semiconductor product with edge integrity detection structure
AssigneeAvago Technologies International Sales Pte. Limited
InventorsXiaoming Li, Liming Tsau, Andy Brotman
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Abstract
A semiconductor product, which comprises a semiconductor chip, an edge integrity detection structure extending along at least part of an edge of the semiconductor chip, and evaluation circuitry formed in and/or on the semiconductor chip, being electrically connected with the edge integrity detection structure, and being configured to evaluate an electric characteristic of the edge integrity detection structure to provide an evaluation signal indicative of a detected edge integrity status of the edge.
Claims20
A semiconductor product, comprising:
- a semiconductor chip;
- an edge integrity detection structure extending along at least part of an edge of the semiconductor chip,
- the edge integrity detection structure comprising a stack of conductive layers, wherein the stack has first lateral side and a second lateral side opposite the first lateral side,
- wherein a first layer of the conductive layers extends from a first end of the first layer associated with the first lateral side to a second end of the first layer associated with the second lateral side and is coupled to a second layer of the stack by a first vertical connection element at the first end of the first layer of the stack,
- wherein the second layer extends from a first end of the second layer associated with the first lateral side to a second end of the second layer associated with the second lateral side,
- wherein a third layer of the conductive layers extends from a first end of the third layer associated with the first lateral side to a second end of the third layer associated with the second lateral side and is coupled to the second layer of the stack by a second vertical connection element at the second end of the third layer of the stack,
- wherein a fourth layer of the conductive layers extends from a first end of the fourth layer associated with the first lateral side to a second end of the fourth layer associated with the second lateral side and is coupled to the third layer of the stack by a third vertical connection element at the first end of the fourth layer of the stack,
- wherein the second layer is not coupled to the third layer at the first end of the third layer,
- wherein the first end of the first layer is opposite the second end of the first layer, the first end of the second layer is opposite the second end of the second layer, the first end of the third layer is opposite the second end of the third layer and the first end of the fourth layer is opposite the second end of the fourth layer;
- and
- circuitry formed in and/or on the semiconductor chip, being electrically connected with the edge integrity detection structure, and being configured to evaluate an electric characteristic of the edge integrity detection structure to provide a signal indicative of an integrity status of the edge.
8 more elements
A semiconductor product, comprising:
- a semiconductor chip;
- an integrated circuit formed in and/or on the semiconductor chip;
- and
- an edge structure extending along at least part of an edge of the semiconductor chip and comprising a plurality of parallel planar electrically conductive layers,
- the edge structure comprising a first section of first conductive layers extending from a first side to a second side opposite the first side and a second section of second conductive layers extending from a third side to a fourth side opposite the third side,
- wherein the second side and the third side are between the first side and the fourth side,
- wherein the first section and the second section are interstitially disposed with respect to each other such that a first conductive layer and a second conductive layer of the first conductive layers in the first section overlaps a third conductive layer and a fourth conductive layer of the second conductive layers in the second section along a vertical line through the first conductive layers and the second conductive layers at a location associated with the second side and the third side,
- wherein second ends of the third conductive layer in the second section and fourth conductive layer in the second section at the third side are between first ends of the first conductive layer in the first section and the second conductive layer of the first section at the second side.
5 more elements
A semiconductor product, comprising:
- a semiconductor chip;
- an integrated circuit formed in and/or on the semiconductor chip;
- and
- an edge integrity detection structure extending along at least part of an edge of the semiconductor chip and comprising a plurality of electrically connected planar electrically conductive layer structures, wherein the electrically conductive layer structures have a first side and a second side opposite the first side and comprise a stack of a first layer, a second layer and a third layer, wherein the first layer, the second layer and the third layer each overlaps at least partially with each other in a planar view, wherein a current path is provided from the first layer at the first side to a second side of the first layer, through a first vertical connection element at the second side to the second layer, from the second layer at the second side to the first side on the second layer, through a second vertical connection element at the first side to the third layer at first side, and from the third layer at the first side to the second side on the third layer, wherein the integrated circuit is configured to provide current for travel along the current path, wherein a vertical line parallel to the current path at the first vertical connection element and through the first vertical connection element at the second side extends through all of the first layer, the second layer, and the third layer.
1 more element
Dependencies are inferred from the claim text.