Gallium nitride-based devices and methods of testing thereof

An integrated circuit, comprising:

• a first circuit formed based on gallium nitride, wherein the first circuit is configured to operate with a first voltage range;
• a second circuit formed based on the gallium nitride, wherein the second circuit is configured to operate with a second voltage range that is substantially higher than the first voltage range;
• a plurality of first test terminals connected only to the first circuit;
• and
• a plurality of second test terminals connected only to the second circuit;
• wherein test signals applied to the plurality of first test terminals and to the plurality of second test terminals, respectively, are independent from each other.

An integrated circuit, comprising:

• a first circuit formed based on one or more Group III-V compound materials and configured to operate with a first voltage range;
• a second circuit formed based on the one or more Group III-V compound materials, operatively coupled to the first circuit, and configured to operate with a second voltage range, wherein the second voltage range is substantially higher than the first voltage range;
• a plurality of first test terminals only operatively coupled to the first circuit;
• and
• a plurality of second test terminals only operatively coupled to the second circuit;
• wherein the plurality of first test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of first transistors of the first circuit, respectively, and the plurality of second test terminals are operatively coupled to a gate, a drain, and a source of at least one of a plurality of second transistors of the second circuit, respectively.