Hydrogen-sensitive material resistant to humidity interference, semiconductor resistive hydrogen sensor, and intelligent hydrogen sensing system, and preparation method and use thereof

Abstract

Provided are a hydrogen-sensitive material resistant to humidity interference, a semiconductor resistive hydrogen sensor, and an intelligent hydrogen sensing system, and a preparation method and use thereof, which relate to the technical field of gas sensors. The hydrogen-sensitive material resistant to humidity interference includes a three-dimensional (3D) porous non-conductive metal oxide substrate, a nano-scale WO3-x film deposited on an outer surface and an inner pore surface of the 3D porous non-conductive metal oxide substrate, and Pd nanoclusters diffusely distributed on a surface of the nano-scale WO3-x film, wherein the nano-scale WO3-x film is formed from oxygen vacancy-containing tungsten oxide.

Dependencies are inferred from the claim text.