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AssigneeAirlich IP ApS
InventorsThomas Rosenørn, Jonas Ingemar, Andrew Butcher, Cecilie Litske Carstens
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The present invention relates to an air treatment method and a system (1a-1f) arranged for treating an air flow (3) to be entered into a semiconductor clean room. Said air flow (3) comprises at least one vapour phase compound, and wherein the air flow (3) is subjected to at least one first treatment process arranged for reducing the concentration of the at least one vapour phase compound in the treated air flow below a predefined threshold, and wherein said first treatment process comprises subjecting the air flow to at least one photooxidation step.
An air treatment method arranged for treating an air flow to be entered into a semiconductor clean room, said air flow comprises at least one vapor phase compound, and wherein the air flow is subjected to at least one treatment process arranged for reducing the concentration of the at least one vapor phase compound in the treated air flow below a predefined threshold, and wherein a first treatment process of the treatment process comprises the steps of:
The air treatment method according to 1, wherein decomposition of the at least one vapor phase compound provides one or more decomposition compounds, and wherein the first treatment process comprises several consecutively arranged photooxidation steps, such that decomposition products generated in a first photooxidation step is further decomposed in one or more subsequent photooxidation steps, until the only decomposition products remaining in the air flow is carbon dioxide and water.
The air treatment method according to any of the 1, wherein the treatment process comprises one or more second treatment processes arranged for removing one or more decomposition compounds from the air flow before said air flow enters into the semiconductor clean room.
The air treatment method according to 28, wherein the photooxidation step comprises an UV-O3 photooxidation process.
A semiconductor clean room air treatment system, said semiconductor clean room air treatment system comprises at least one photooxidation zone and at least one catalytic zone, whereby the semiconductor clean room air treatment system is arranged such that the concentration of the at least one vapor phase compound in an air flow is reduced below a predefined threshold, wherein the at least one catalytic zone is arranged before the at least one photooxidation zone, seen in the flow direction, wherein the catalytic zone comprises a deNOx-catalyst and an oxidation catalyst and wherein the air flow to be treated comprises at least one amine, and wherein said photooxidation zone comprises at least one excimer lamp arranged for emitting a wavelength in the range between 126 nm and 240 nm.
The semiconductor clean room air treatment system according to 6, wherein the catalytic zone is operated at a temperature between 80° C. and 225° C.
Dependencies are inferred from the claim text.