Apparatuses and method for oriented deposition

An apparatus, comprising:

• a deposition chamber elongated horizontally and comprising a top portion with a top plate extending horizontally and a bottom portion with a bottom plate extending horizontally,
• a substrate positioned horizontally in the deposition chamber between top plate and the bottom plate,
• an inlet arranged in the top portion of the deposition chamber and configured to provide a gas comprising high aspect ratio molecular structures, HARM-structures, into the deposition chamber,
• at least one outlet arranged in the top portion of the deposition chamber and configured to collect gas from the deposition chamber, and
• a control system configured to control gas flow at the inlet and the at least one outlet, and the temperature and electric potential of the top plate and the bottom plate, wherein
• the top plate and the substrate are positioned to create a gap between the top plate and the substrate, so that the flow of the gas comprising HARM-structures from the inlet towards the at least one outlet is substantially parallel to the substrate, and wherein
• the control system is configured to:
• maintain the temperature of the top plate and the bottom plate at levels sufficiently different to create a temperature gradient in proximity to the substrate, and/or
• maintain the electric potential of the top plate and the bottom plate at values sufficient to create a uniform electric field in proximity to the substrate.

A method for oriented deposition of HARM-structures, the method comprising:

• providing, via an inlet, a gas comprising HARM-structures into a deposition chamber at a predetermined gas flow rate, wherein the deposition chamber is elongated horizontally and comprises a top portion and a bottom portion, an inlet in the top portion and an outlet in the bottom portion, the deposition chamber being capable of holding a filter positioned horizontally separating the top portion from the bottom portion;
• maintaining a laminar flow of the gas comprising HARM-structures at a Reynolds number between 10 and 3500 in proximity to a deposition area of the filter, wherein the laminar flow of the gas comprising HARM-structures is least partially parallel to the filter;
• depositing HARM-structures in the deposition area of the filter from the gas comprising HARM-structures;
• and
• collecting, via an outlet, the remaining gas from the deposition chamber at a predetermined gas flow rate.

A method for oriented deposition of HARM-structures, the method comprising:

• providing, via an inlet, a gas comprising HARM-structures into a deposition chamber at a predetermined gas flow rate, wherein the deposition chamber is elongated horizontally and comprises a top portion and a bottom portion, an inlet in the top portion and an outlet in the top portion, and a control system, the deposition chamber being capable of holding a substrate positioned horizontally separating the top portion from the bottom portion;
• maintaining a laminar flow of the gas comprising HARM-structures at a Reynolds number between 10 and 3500 in proximity to a deposition area of the substrate, wherein the laminar flow of the gas comprising HARM-structures is least partially parallel to the substrate;
• depositing HARM-structures in the deposition area of the substrate from the gas comprising HARM-structures;
• and
• collecting, via an outlet, the remaining gas from the deposition chamber at a predetermined gas flow rate.