Method for forming a thin film resistor with improved thermal stability

A method for forming a thin film resistor with improved thermal stability, comprising:

• providing a substrate having thereon a first dielectric layer;
• depositing a resistive material layer on the first dielectric layer;
• forming a capping layer on the resistive material layer;
• after forming the capping layer on the resistive material layer, subjecting the resistive material layer to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a deuterium atmosphere, thereby forming a treated resistive material layer, wherein the capping layer is a bi-layered capping layer comprising a silicon nitride bottom layer and a silicon oxide top layer;
• and
• patterning the capping layer and the treated resistive material layer to form a thin film resistor on the first dielectric layer.