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US 12,206,399 B2Granted
Debounced solid state switching device
AssigneeCummins Inc.
InventorOliver Daniel Wilson
Life of this patent
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Abstract
The present disclosure provides a debounced solid state switching device comprised of at least two insulated-gate bipolar transistors (“IGBTs”) within a parallel architecture. Multiple pairs of IGBTs may be used in a parallel architecture to extend ampacity and improve voltage withstand capability. The device provides improved flexibility and portability to facilitate time and cost efficiency, as the size and complexity of the device is directly dependent on the needs of the user. Furthermore, the procurement of the components of the device is simple, providing greater accessibility.
Claims11
A switching device, comprising:
- a controller;
- a first insulated-gate bipolar transistor communicatively coupled to the controller and comprising a first connection terminal and a second connection terminal, the second connection terminal comprising a first contact to selectively place the second connection terminal of the first insulated-gate bipolar transistor in communication with the first connection terminal of the first insulated-gate bipolar transistor to close a module circuit of the first insulated-gate bipolar transistor;
- and
- a second insulated-gate bipolar transistor communicatively coupled to the controller and comprising a first connection terminal and a second connection terminal, the second connection terminal of the second insulated-gate bipolar transistor comprising a second contact to selectively place the second connection terminal of the second insulated-gate bipolar transistor in communication with the first connection terminal of the second insulated-gate bipolar transistor to close a module circuit of the second insulated-gate bipolar transistor;
- a third insulated-gate bipolar transistor communicatively coupled to the controller and comprising a first connection terminal and a second connection terminal;
- and
- a fourth insulated-gate bipolar transistor communicatively coupled to the controller and comprising a first connection terminal and a second connection terminal;
- wherein the first connection terminal of the first insulated-gate bipolar transistor is communicatively coupled to the first connection terminal of the second insulated-gate bipolar transistor and the second connection terminal of the first insulated-gate bipolar transistor is communicatively coupled to the second connection terminal of the second insulated-gate bipolar transistor;
- and
- the second connection terminal of the third insulated-gate bipolar transistor comprises a third contact to place the second connection terminal of the third insulated-gate bipolar transistor in communication with the first connection terminal of the third insulated-gate bipolar transistor to close a module circuit of the third insulated-gate bipolar transistor;
- and
- the second connection terminal of the fourth insulated-gate bipolar transistor comprises a fourth contact to place the second connection terminal of the fourth insulated-gate bipolar transistor in communication with the first connection terminal of the fourth insulated-gate bipolar transistor to close a module circuit of the fourth insulated-gate bipolar transistor.
9 more elements
Dependencies are inferred from the claim text.