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US 12,206,390 B2Granted
Gate drive circuit, test device, and switching method
AssigneeSintokogio, Ltd.
InventorMasayoshi Takinami
Life of this patent
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Abstract
A gate drive circuit is used in a dynamic characteristic test on a power semiconductor, the gate drive circuit includes a voltage source configured to change a gate voltage of a gate of the power semiconductor, a plurality of resistance setting circuits connected in parallel with the voltage source and the gate, and a switching circuit connecting at least one resistance setting circuit of the resistance setting circuits to the voltage source and the gate.
Claims3
A test device for use in a dynamic characteristic test on a power semiconductor, the test device comprising:
- a controller configured to output a gate signal to control ON/OFF of a gate of the power semiconductor;
- a gate drive circuit configured to apply a gate voltage to the gate in accordance with the gate signal outputted from the controller;
- and
- a sensor configured to measure a collector-emitter voltage in the power semiconductor, wherein
- the gate drive circuit comprises
- a voltage source configured to change a gate voltage of the gate,
- a plurality of resistance setting circuits connected in parallel with the voltage source and the gate, and
- a switching circuit connecting at least one resistance setting circuit of the resistance setting circuits to the voltage source and the gate.
5 more elements
Dependencies are inferred from the claim text.