Method for forming resistive random access memory structure
AssigneeUnited Microelectronics Corp.
InventorsWen-Jen Wang, Chun-Hung Cheng, Chuan-Fu Wang
Life of this patent
Estimating the term…
Abstract
A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming the resistive random access memory (RRAM) structure is also provided.
Claims14
A resistive random access memory (RRAM) forming method, comprising:
- forming a RRAM cell on a substrate;
- depositing a dielectric layer blanketly covering the substrate beside the RRAM cell;
- etching the dielectric layer to form recesses in the dielectric layer beside the RRAM cell;
- and
- spacers filling into the recesses, wherein the spacers comprise at least one of silicon nitride (SiN), silicon carbide (SiC), nitrogen containing silicon carbide (SiCN), carbon containing silicon oxynitride (SiCNO).
Dependencies are inferred from the claim text.