Solid state tunable ionic oscillator dielectric materials and resonant devices
AssigneesDrexel University, Bar-Ilan University, The Regents of the University of California
InventorsJonathan E. Spanier, Zongquan Gu, Ilya Grinberg, Atanu Samanta, Haim Barak, Cedric J. G. Meyers, Robert A. York
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Abstract
An article comprising a ferroelectric material in its ferroelectric phase, wherein the article is configured to enable low-loss propagation of signals with ultra-low dielectric loss at one or more select frequencies.
Claims19
An article comprising a ferroelectric material including a high density of one or more fluctuating ferroelectric domain walls, wherein the article contains one or more fluctuating ferroelectric domain walls that enable efficient propagation of signals with ultra-low dielectric loss, the ultra-low dielectric loss comprising a range of 103<Q<107, or 10−3>tanδ>10−7, wherein Q refers to a quality factor, at one or more select frequencies, wherein the density of domain walls ranges from 1-100 per 50,000 nm2.
An article comprising a ferroelectric material in thin film form in its ferroelectric phase, wherein the composition and strain of the material are selected to stabilize the material, for a given temperature, in or about two or more energetically equivalent thermodynamically predicted domain wall variant types as specified by a domain wall variant boundary or vertex of intersecting boundaries, thereby enabling efficient propagation of signals with ultra-low dielectric loss, the ultra-low dielectric loss comprising a range of 103<Q<107, or 10−3>tanδ>10−7, wherein Q refers to a quality factor, at select frequencies.
Dependencies are inferred from the claim text.