High resolution advanced OLED sub-pixel circuit and patterning method

A device, comprising:

• a first sub-pixel and a second sub-pixel each comprising:
• anodes disposed over a substrate;
• a plurality of overhang structures disposed over the substrate alongside opposite sidewalls of the anodes, the plurality of overhang structures comprising:
• a first portion comprising a first material, the first portion further comprising a lower sidewall;
• second portion disposed over at least a portion of the first portion, the second portion comprising a second material, the second portion further comprising an overhang extension extending past the lower sidewall, wherein the lower sidewall of the first portion and a bottom surface of the overhang extension of the second portion partially define a trench area;
• an organic light emitting diode (OLED) material disposed over the anode, an upper surface of the overhang structures under the overhang extension, and within the trench area;
• a cathode disposed over the OLED material;
• and
• an encapsulation layer disposed over the cathode.

A sub-pixel circuit, comprising:

• a plurality of anodes disposed over a substrate, adjacent anodes defining a well;
• adjacent overhang structures disposed in the well, the adjacent overhang structures comprising:
• a first portion, the first portion comprising a lower sidewall;
• a second portion disposed over at least a portion of the first portion, the second portion comprising an overhang extension extending past the lower sidewall, wherein the well has a trench area defined by the lower sidewall of the first portion and a bottom surface of the overhang extension of the second portion with a gap between the second portions of the adjacent overhang structures;
• an organic light emitting diode (OLED) material disposed over the anode, an upper surface of the overhang structures, under the overhang structures extension, and within the trench area;
• a cathode disposed over the OLED material disposed over the upper surface of the overhang structures, under the overhang structures, and within the trench area;
• and
• an encapsulation layer disposed over the cathode, wherein the encapsulation layer extends under at least a portion of the second portion along the lower sidewall of the first portion, and contacts the bottom surface of the overhang extension of the overhang structures.