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AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsDesmond Jia Jun Loy, Eng Huat Toh, Shyue Seng Tan
Estimating the term…
The disclosed subject matter relates generally to structures, memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices having two resistive layers and a conductive layer arranged between two electrodes. The present disclosure provides a memory device including a first electrode above an interlayer dielectric region, a second electrode above the interlayer dielectric region, the second electrode is laterally adjacent to the first electrode, a conductive layer between the first electrode and the second electrode, in which the conductive layer is electrically isolated, a first resistive layer between the first electrode and the conductive layer, and a second resistive layer between the second electrode and the conductive layer.
A memory device comprising:
A memory device comprising:
A memory device comprising:
Dependencies are inferred from the claim text.