Ferroelectric memory device and method of forming the same

A ferroelectric memory device, comprising:

• a multi-layer stack disposed on a substrate and comprising a plurality of gate electrode layers and a plurality of dielectric layers stacked alternately;
• a plurality of dielectric pillars disposed on the substrate and penetrating through the multi-layer stack;
• an oxide semiconductor layer comprising a first metal element and disposed between the multi-layer stack and each of the plurality of dielectric pillars;
• and
• a ferroelectric layer disposed between the oxide semiconductor layer and the multi-layer stack;
• and
• a plurality of oxygen scavenging layers comprising a second metal element, one of the plurality of oxygen scavenging layers disposed between the ferroelectric layer and each of the plurality of gate electrode layers.

A ferroelectric memory device, comprising:

• a plurality of dielectric layers alternatively stacked with a plurality of conductive layers;
• an oxide semiconductor layer disposed along sides of the plurality of conductive layers and the plurality of dielectric layers;
• a ferroelectric layer disposed along a sidewall of the oxide semiconductor layer;
• and
• a plurality of oxygen scavenging layers disposed vertically between adjacent ones of the plurality of dielectric layers and laterally between the ferroelectric layer and each of the plurality of conductive layers, wherein a center of a first oxygen scavenger layer of the plurality of oxygen scavenging layers is directly below a lower surface of an overlying one of the plurality of dielectric layers.