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US 12,193,236 B2Granted
Memory device and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHitoshi Kunitake, Satoru Ohshita, Kazuki Tsuda, Tatsuya Onuki
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Abstract
A memory device with a small number of wirings using a NAND flash memory having a three-dimensional structure with a large number of stacked memory cell layers is provided. A decoder is formed using an OS transistor. An OS transistor can be formed by a method such as a thin film method, whereby the decoder can be provided to be stacked above the NAND flash memory having a three-dimensional structure. This can reduce the number of wirings provided substantially perpendicular to the memory cell layers.
Claims8
A memory device comprising:
- a first layer;
- a second layer;
- and
- a third layer,
- wherein a decoder is provided in the first layer,
- wherein a memory cell portion is provided in the second layer,
- wherein a circuit is provided in the third layer,
- wherein the circuit is configured to control the decoder and the memory cell portion,
- wherein the decoder is configured to select or deselect part of the memory cell portion,
- wherein at least part of the second layer is provided to be stacked above the third layer, and
- wherein at least part of the first layer is provided to be stacked above the second layer.
8 more elements
A memory device comprising:
- a first layer;
- a second layer;
- and
- a third layer,
- wherein a decoder is provided in the first layer,
- wherein a memory cell portion is provided in the second layer,
- wherein a circuit is provided in the third layer,
- wherein the circuit is configured to control the decoder and the memory cell portion,
- wherein the circuit is configured to output a selection signal to the decoder,
- wherein the memory cell portion comprises a NAND memory element having a three-dimensional structure,
- wherein the decoder is configured to output a signal for selecting or deselecting part of the memory cell portion to the memory cell portion in accordance with the selection signal,
- wherein at least part of the second layer is provided to be stacked above the third layer, and
- wherein at least part of the first layer is provided to be stacked above the second layer.
10 more elements
Dependencies are inferred from the claim text.