Three-dimensional memory device with restrained charge migration and method for forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorXiaoxin Liu
Life of this patent
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Abstract
A three-dimensional (3D) memory device includes a first stack structure, a first channel structure, a second stack structure, and a second channel structure. The first stack structure includes interleaved first conductive layers and first dielectric layers. The first channel structure extends through the first stack structure along a first direction. The first channel structure includes a first semiconductor channel, and a first memory film over the first semiconductor channel. The first memory film includes a storage layer. The storage layer is separated by the first dielectric layers into a plurality of sections.
Claims20
A three-dimensional (3D) memory device, comprising:
- a first stack structure comprising interleaved first conductive layers and first dielectric layers;
- a first channel structure extending through the first stack structure along a first direction, the first channel structure comprising a first semiconductor channel, and a first memory film over the first semiconductor channel, and the first memory film comprising a first storage layer;
- a second stack structure comprising interleaved second conductive layers and second dielectric layers formed over the first stack structure;
- and
- a second channel structure extending through the second stack structure along the first direction, and the second channel structure comprising a second semiconductor channel, and a second memory film over the second semiconductor channel, and the second memory film comprises a second storage layer,
- wherein the first storage layer and the second storage layer have different continuity in the first direction, the first storage layer is separated by the first dielectric layers into a plurality of storage sections, and the second storage layer consecutively extends along the first direction.
A three-dimensional (3D) memory device, comprising:
- a plurality of memory structures stacking on each other, each memory structure comprising:
- a stack structure comprising interleaved conductive layers and dielectric layers;
- and
- a channel structure extending through the stack structure along a first direction, the channel structure comprising a semiconductor channel, and a memory film over the semiconductor channel, and the memory film comprising a tunneling layer over the semiconductor channel, a storage layer over the tunneling layer, and a blocking layer over the storage layer,
- wherein the storage layers in two adjacent memory structures have different continuity in the first direction.
A method for forming a three-dimensional (3D) memory device, comprising:
- forming a first dielectric stack structure comprising a plurality of first dielectric layers and a plurality of second dielectric layers alternatingly arranged;
- forming a first channel structure in the first dielectric stack structure along a first direction, comprising:
- forming a channel hole in the first dielectric stack structure along the first direction, wherein a sidewall of the channel hole comprises a recess;
- forming a first storage layer in the recess of the channel hole in the plurality of first dielectric layers;
- forming a semiconductor channel over the first storage layer;
- and
- forming a dielectric core filling the channel hole;
- forming a second dielectric stack structure over the first dielectric stack structure, the second dielectric stack structure comprising a plurality of third dielectric layers and a plurality of fourth dielectric layers alternatingly arranged;
- and
- forming a second channel structure in the second dielectric stack structure along the first direction, comprising forming a second storage layer having second continuity different from first continuity of the first storage layer in the first direction.
Dependencies are inferred from the claim text.