Semiconductor device fabrication

A method for fabricating a semiconductor device, comprising:

• forming a stack of layers having a first region and a second region, the stack of layers including at least a first layer;
• forming a hard mask layer on the stack of layers in the first region of the semiconductor device;
• patterning the stack of layers in the second region of the semiconductor device, the patterning of the stack of layers in the second region removing a portion of the stack of layers in the second region, and exposing a side of the stack of layers;
• depositing in the first region and the second region a second layer that has a lower remove rate than the first layer, the second layer overfilling the portion of the stack of layers in the second region and covering the side of the stack of layers and the hard mask layer in the first region;
• removing a portion of the second layer that covers a portion of the hard mask layer to expose the portion of the hard mask layer, with a remaining portion of the hard mask layer still covered by the second layer;
• planarizing a remaining portion of the second layer that is in the second region and still covers the remaining portion of the hard mask layer until the second layer is leveled with the exposed portion of the hard mask layer and the remaining portion of the hard mask layer is exposed;
• and
• removing the hard mask to expose the stack of layers in the first region of the semiconductor device and planarizing the second layer such that the second layer is leveled with the exposed stack of layers in the semiconductor device,
• wherein no intermediate step is performed between removing the portion of the second layer and planarizing the remaining portion of the second layer.