Semiconductor device

A semiconductor device comprising:

• a first conductivity type semiconductor substrate;
• a second conductivity type first impurity diffusion layer disposed in a surface region of the semiconductor substrate;
• a first resistance element, including a first conductivity type second impurity diffusion layer and having an input portion, disposed in the second conductivity type first impurity diffusion layer;
• a second resistance element, including a first conductivity type third impurity diffusion layer that is separated from the second conductivity type first impurity diffusion layer;
• a transistor that is out from the second conductivity type first impurity diffusion layer and the first conductivity type third impurity diffusion layer including:
• a gate connected to the input portion,
• a source connected to the second conductivity type first impurity diffusion layer, and
• a drain connected to a voltage source, the voltage source having a voltage higher than a voltage of the input portion;
• and
• a current source connected to the source, wherein
• the first resistance element and the second resistance element are in series between the input portion and an output portion, the output portion having a voltage lower than the voltage of the voltage source.