Semiconductor structure and method for forming the same
AssigneeWinbond Electronics Corp.
InventorsWei-Che Chang, Kai Jen, Yu-Po Wang
Life of this patent
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Abstract
A semiconductor structure includes a semiconductor substrate and an isolation structure disposed in the semiconductor substrate. The isolation structure includes a lining layer disposed along a boundary between the semiconductor substrate and the isolation structure, a first oxide fill layer disposed over the lining layer, a dielectric barrier structure surrounding the first oxide fill layer in a closed loop, and a second oxide fill layer disposed over the dielectric barrier structure and adjacent to the lining layer.
Claims10
A semiconductor structure, comprising:
- a semiconductor substrate;
- and
- an isolation structure disposed in the semiconductor substrate, wherein the isolation structure comprises:
- a lining layer disposed along a boundary between the isolation structure and the semiconductor substrate;
- a first oxide fill layer disposed over the lining layer;
- a dielectric barrier structure surrounding the first oxide fill layer in a closed loop;
- and
- a second oxide fill layer disposed over the dielectric barrier structure and adjacent to the lining layer,
- wherein the lining layer is in direct contact with the second oxide fill layer.
A semiconductor structure, comprising:
- a semiconductor substrate;
- and
- an isolation structure disposed in the semiconductor substrate, wherein the isolation structure comprises:
- a nitride fill layer;
- a first oxide fill layer disposed over the nitride fill layer;
- a dielectric barrier structure surrounding the first oxide fill layer in a closed loop;
- a second oxide fill layer disposed over the dielectric barrier structure;
- and
- a lining structure disposed between the semiconductor substrate and the isolation structure, wherein the lining structure is in direct contact with the second oxide fill layer.
Dependencies are inferred from the claim text.