Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorHyung-Jin Park
Life of this patent
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Abstract
A semiconductor device includes a stacked line structure including a bit line over a substrate, an active layer positioned at a higher level than the stacked line structure and parallel to the bit line, a capacitor positioned at a higher level than the active layer, a first plug extending downwardly to be coupled to the bit line through the active layer, a second plug formed between the active layer and the capacitor, and a word line extending in a direction that intersects with the bit line while intersecting with the active layer.
Claims11
A method for fabricating a semiconductor device, the method comprising:
- preparing a plurality of stacked line structures including a bit line over a substrate and a line-type active layer over the bit line, wherein longest directions of the bit line and the line-type active layer extends in a first direction;
- forming a plurality of island-type active layers by cutting the line-type active layer;
- forming a first plug for electrically coupling the bit line to the island-type active layers, wherein a longest direction of the first plug extends in a second direction perpendicular to the first direction;
- forming a word line over the island-type active layers;
- forming a second plug which is coupled to both sides of each of the island-type active layers;
- and
- forming a plurality of capacitors that are respectively coupled to the second plugs.
A method for fabricating a semiconductor device, comprising:
- preparing a plurality of stacked line structures including a bit line over a substrate, a first layer over the bit line, and a line-type active layer over the first layer, wherein the bit line and the line-type active layer is electrically isolated by a first layer, wherein longest directions of the bit line and the line-type active layer extends in a first direction;
- forming a plurality of island-type active layers by cutting the line-type active layer;
- forming a first plug penetrating the first layer to be electrically coupled to the bit line and the island-type active layer, wherein a longest direction of the first plug extends in a second direction perpendicular to the first direction;
- forming a word line over the island-type active layers;
- forming a second plug which is coupled to both sides of each of the island-type active layers;
- and
- forming a plurality of capacitors that are respectively coupled to the second plugs.
Dependencies are inferred from the claim text.