Method of forming semiconductor device and semiconductor device

A semiconductor device, comprising:

• a substrate, wherein the substrate has an array region, and the array region comprises a first semiconductor structure and a first dielectric layer that covers a surface of the first semiconductor structure, the first semiconductor structure comprises a capacitor array and a conductive covering layer that covers the capacitor array, and the first dielectric layer covers a surface of the conductive covering layer;
• a groove, wherein the groove runs through the first dielectric layer along a direction parallel to a surface of the substrate;
• and
• an array contact line, located in the groove and in electrical contact with the first semiconductor structure, wherein the array contact line runs through the first dielectric layer along a direction parallel to a surface of the substrate;
• the array contact line runs through the first dielectric layer along a direction perpendicular to the substrate and extends into the conductive covering layer.