Semiconductor device and method for manufacturing the same
AssigneeChangxin Memory Technologies, Inc.
InventorsXinran Liu, Yule Sun
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Abstract
The present disclosure provides a semiconductor device and a method for manufacturing the same, and relates to the field of semiconductor technologies. The manufacturing method includes: providing a substrate and forming a film layer stack structure thereon; etching the film layer stack structure to form a first region containing a through hole through which the substrate is exposed and a second region containing a hole section through which the substrate is not exposed; and patterning and etching the second region to remove the film layer stack structure within the second region.
Claims16
A method for manufacturing a semiconductor device, comprising:
- providing a substrate and forming a film layer stack structure thereon;
- etching the film layer stack structure to form a first region containing a through hole through which the substrate is exposed and a second region containing a hole section through which the substrate is not exposed;
- and
- patterning and etching the second region to remove the film layer stack structure within the second region;
- and,
- wherein there are a plurality of the through holes, the substrate directly opposite to the first region comprises a plurality of storage node contact plugs, and each of the storage node contact plugs is exposed through each of the through holes in a one-to-one correspondence.
Dependencies are inferred from the claim text.