Memory device

A memory device, comprising:

• first memory cells of a first memory array and second memory cells in a second memory array, wherein the first and second memory cells are in a same row of the memory device and sandwiched between a plurality of first edge cells and a plurality of second edge cells along a first direction in which the same row extends;
• an isolation cell arranged between the plurality of first edge cells and the plurality of second edge cells;
• a first word line that extends in the first direction to pass through the plurality of first edge cells to be coupled to the first memory cells;
• and
• a second word line that extends in the first direction to pass through the plurality of second edge cells to be coupled to the second memory cells,
• wherein the first and second word lines are separated from each other along the first direction by a region interposed between the first memory cells and the second memory cells.