Solid-state image sensor and imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorKazuki Hizu
Life of this patent
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Abstract
Improved is performance of a solid-state image sensor that detects presence or absence of a photon. The solid-state image sensor includes a light-receiving substrate and a logic substrate. In the solid-state image sensor, there is disposed, on the light-receiving substrate, a plurality of avalanche photodiodes, each of the avalanche photodiodes generating a current corresponding to incident of a photon. Furthermore, in the solid-state image sensor, there is disposed, on the logic substrate, a counter that counts the number of photons on the basis of a current of a selected avalanche photodiode among the plurality of avalanche photodiodes.
Claims20
A solid-state image sensor comprising:
- a light-receiving substrate on which a plurality of avalanche photodiodes is disposed, each of the avalanche photodiodes generating a current corresponding to incidence of a photon;
- and
- a logic substrate on which a counter is disposed, the counter counting a number of the photons on a basis of the current of a selected avalanche photodiode among the plurality of avalanche photodiodes, wherein
- the plurality of avalanche photodiodes includes first and second avalanche photodiodes, and
- there are further disposed, on the logic substrate, a detection circuit that generates a pulse signal on a basis of a voltage according to the current and outputs the pulse signal to the counter, a first selection transistor that opens and closes a path between one end of the first avalanche photodiode and the detection circuit, a second selection transistor that opens and closes a path between one end of the second avalanche photodiode and the detection circuit, and a control circuit that controls a voltage of each gate of the first and second selection transistors.
A solid-state image sensor comprising:
- a light-receiving substrate on which a plurality of avalanche photodiodes is disposed, each of the avalanche photodiodes generating a current corresponding to incidence of a photon;
- and
- a logic substrate on which a counter is disposed, the counter counting a number of the photons on a basis of the current of a selected avalanche photodiode among the plurality of avalanche photodiodes, wherein
- the plurality of avalanche photodiodes includes first and second avalanche photodiodes,
- there is further disposed, on the logic substrate, a detection circuit that generates a pulse signal on a basis of a voltage according to the current and outputs the pulse signal to the counter, and
- there are further disposed, on the light-receiving substrate, a first selection transistor that opens and closes a path between one end of the first avalanche photodiode and the detection circuit, a second selection transistor that opens and closes a path between one end of the second avalanche photodiode and the detection circuit, and a clip transistor that fixes a potential of the one end to a predetermined value.
A solid-state image sensor comprising:
- a light-receiving substrate on which a plurality of avalanche photodiodes is disposed, each of the avalanche photodiodes generating a current corresponding to incidence of a photon;
- a logic substrate on which a counter is disposed, the counter counting a number of the photons on a basis of the current of a selected avalanche photodiode among the plurality of avalanche photodiodes;
- and
- an intermediate substrate, wherein
- the plurality of avalanche photodiodes includes first and second avalanche photodiodes, and
- there are further disposed, on the intermediate substrate, a first selection transistor that opens and closes a path between one end of the first avalanche photodiode and a common node, and a second selection transistor that opens and closes a path between one end of the second avalanche photodiode and the common node.
Dependencies are inferred from the claim text.