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US 12,191,858 B2Granted
Thermal-electric logic integrated circuit and use of said integrated circuit
OwnerJanos Mizsei, Jyrki Lappalaineninventors
Life of this patent
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Abstract
The invention is based on the integrated application of a thermal-electric active device (phonon transistor). Phonon transistors consist of resistors that respond to temperature changes with a metal-insulator phase transition, or possibly other resistors suitable for heat generation. These resistors are thermally and electrically coupled to each other as needed, and are thermally and electrically insulated from each other. The thermal-electric system built in this way is suitable for the implementation of high-integration logic networks.
Claims8
A thermal-electric integrated logic circuit, comprising:
- at least two inputs (InA-InH,, In/Outth1, In/Outth2, In/Outth3),
- at least one output (Out, In/Outth1, In/Outth2, In/Outth3),
- a series member consisting of a resistor (R0) and a metal-insulator transition capable resistor (RMIT) used as a vanadium oxide (VO2) switching element connected to a supply voltage (UCC), and
- where the at least one output (Out) is made up by the common point of the resistor (R0) of the series member and the metal-insulator transition capable resistor (RMIT) used as the VO2 switching element, and
- where the at least two inputs (InA-InH, In/Outth1, In/Outth2, In/Outth3) comprise at least one electric input (InA-InH) and at least one thermal input (In/Outth2, In/Outth3),
- whereas
- in case of a NOR logic gate circuit, at least one input resistor (R1-R6) constituting a thermal input of the NOR logic gate circuit is arranged closer to the metal-insulator transition capable resistor (RMIT) used as the VO2 switching element of the NOR logic gate circuit than a thermal diffusion length (Lth),
- in case of a NAND logic gate circuit, the at least one input resistor (R1-R6) constituting a thermal input of the NAND logic gate circuit is arranged farther from the metal-insulator transition capable resistor (RMIT) used as the VO2 switching element of the NAND logic gate circuit than a thermal diffusion length (Lth),
- in case of a majority logic gate circuit, all of the excited input resistors (R1-R6) are arranged at an identical distance corresponding to the thermal diffusion length (Lth) from the metal-insulator transition capable resistor (RMIT) of the majority logic gate circuit used as the VO2 switching element;
- in case of an extended majority logic gate circuit, all of the excited input resistors (R1-R6) are arranged at an identical distance, less than the thermal diffusion length (Lth) or greater than the thermal diffusion length (Lth), from the metal-insulator transition capable resistor (RMIT) used as the VO2 switching element;
- further providing a weighted majority logic gate circuit, at least one excitation input resistor is arranged at a distance smaller than the thermal diffusion length (Lth) from the metal-insulator transition capable resistor (RMIT) of the weighted majority logic gate circuit used as the VO2 switching element, and at least two excitation input resistors are arranged at a distance greater than the thermal diffusion length (Lth) from the metal-insulator transition capable resistor (RMIT) used as the VO2 switching element.
8 more elements
Dependencies are inferred from the claim text.