High-implant channel semiconductor device and method for manufacturing the same

A Gilbert-cell mixer comprising:

• a Gilbert-cell mixer circuit including a plurality of transistors electrically connected to each other, wherein one of the transistors comprises:
• a first fin extending in a first direction over a substrate,
• wherein the first fin includes a first region along the first direction and second regions on opposing sides of the first region along the first direction, and the first region and second regions comprise a semiconductor,
• wherein the first region contains a first dopant in an upper portion of the first region of the first fins and not in a lower portion of the first region of the first fins and not in upper and lower portions of the second region,
• wherein the first dopant in the upper portion of the first region extends downward from an uppermost surface of the first fins to a distance of about 10 nm to 200 nm along a second direction perpendicular to the first direction,
• wherein a concentration of the first dopant in the upper portion of the first region ranges from 1.0×1012 to 1.0×1015 ions cm−3,
• a gate electrode extending in a third direction perpendicular to the first direction and the second direction overlying the first region;
• and
• another transistor with a doped region having a second dopant concentration of 1.5×1016 to 2.0×1020 atoms cm−3 connected in parallel with the one of the transistors, and the doped region is centered in a third region in a second fin at 15 to 20 nm in the second direction from a top of the second fin and 3 to 7 nm in the third direction perpendicular to the first direction and second direction from a sidewall of the second fin, and a second gate electrode extending in the third direction perpendicular overlying the third region.

A semiconductor device, comprising a first transistor and a second transistor,

• wherein the first transistor comprises:
• a first fin extending in a first direction over a substrate,
• wherein the first fin includes a first region along the first direction and second regions on either side of the first region along the first direction,
• wherein a first portion of the first region of the first fin contains a first dopant and the first portion is defined by the first dopant,
• the first portion extends from an uppermost surface of the first fin to a distance of about 10 nm to 200 nm along a second direction perpendicular to the first direction,
• wherein the first dopant is not contained in a second portion of the first fin located at a greater distance along the second direction from the uppermost surface of the first fin than the first portion of the first fins and the first dopant is not contained in the second regions of the first fin;
• and
• the second transistor is connected in parallel with the first transistor,
• wherein the second transistor includes a second dopant in a doped channel region in a second fin having a second dopant concentration of 1.5×1016 to 2.0×1020 atoms cm−3, and the doped channel region is centered in a channel region in the second fin at 15 to 20 nm in the second direction from a top of the second fin and 3 to 7 nm in the third direction from a sidewall of the second fin.