Semiconductor device

A semiconductor device comprising:

• a temperature compensation circuit configured to output a proportional-to-absolute temperature (PTAT) current determined based on a temperature of the semiconductor device as a compensation current;
• a voltage regulator configured to output a pump voltage having a level determined based on the compensation current;
• a clock generator configured to generate a clock signal having a frequency determined based on the compensation current;
• a level shifter configured to generate a control signal adjusted a swing level of the control signal based on the clock signal and the pump voltage;
• and
• a charge pump including a plurality of unit circuits, each of the plurality of unit circuits including a plurality of pumping capacitors configured to be charged and discharged by the control signal,
• wherein the level shifter is disposed to be closer to the charge pump than the clock generator.

A semiconductor device comprising:

• a level shifter configured to:
• receive a first clock signal, a second clock signal having a phase opposite to a phase of the first clock signal, and a pump voltage,
• output a first control signal and a second control signal based on the first and second clock signals and the pump voltage, and
• adjust swing levels of the first and second control signals based on a level of the pump voltage;
• and
• a charge pump including a plurality of unit circuits, each of the plurality of unit circuits including:
• at least one first pumping capacitor configured to be charged and discharged by the first control signal, and
• at least one second pumping capacitor configured to be charged and discharged by the second control signal,
• wherein at least one of a frequency and a swing level of each of the first control signal and the second control signal is increased as a temperature of the semiconductor device is increased, and
• wherein the level of the pump voltage is determined based on the temperature.