Overcurrent protection circuit, memory storage device and overcurrent protection method
AssigneePhison Electronics Corp.
InventorShu-Han Chou
Life of this patent
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AssigneePhison Electronics Corp.
InventorShu-Han Chou
Estimating the term…
An overcurrent protection circuit, a memory storage device, and an overcurrent protection method are disclosed. The overcurrent protection circuit includes a load switch, a first mirror circuit, a second mirror circuit, and a control circuit. The first mirror circuit is configured to generate a first node voltage in a state that a voltage difference between two terminals of the load switch is within a first voltage region. The second mirror circuit is configured to generate a second node voltage in a state that the voltage difference between the two terminals of the load switch is within a second voltage region. The control circuit is configured to cut off the load switch according to at least one of the first node voltage and the second node voltage to perform an overcurrent protection. The first voltage region is different from the second voltage region.
An overcurrent protection circuit, comprising:
A memory storage device, comprising:
An overcurrent protection method, configured to control a load switch, the overcurrent protection method comprising:
Dependencies are inferred from the claim text.