Chip-on-board type photoelectric device

A photoelectric device, comprising:

• a metallic substrate, comprising:
• a bonding area;
• a dam, disposed on the metallic substrate and surrounding the bonding area;
• a plurality of photoelectric elements, disposed on the metallic substrate and in the bonding area;
• a fluoride red-light phosphor, disposed over the plurality of first photoelectric elements and being spaced from the metallic substrate;
• and
• an isolation layer, disposed in the dam and covering the fluoride red-light phosphor as well as between the fluoride red-light phosphor and the metallic substrate;
• wherein the isolation layer comprises a first isolation layer and a second isolation layer, the first isolation layer is disposed between the fluoride red-light phosphor and the metallic substrate as well as between the second isolation layer and the metallic substrate, and the second isolation layer is disposed covering the fluoride red-light phosphor.

A COB type photoelectric device, comprising:

• a metallic substrate, comprising:
• a photoelectric element fixing area;
• a dam, disposed on the metallic substrate and surrounding the photoelectric element fixing area;
• a plurality of first photoelectric elements, disposed on the metallic substrate and in the photoelectric element fixing area;
• a KSF phosphor based layer, disposed on the plurality of first photoelectric elements and being not in contact with the metallic substrate, wherein the KSF phosphor based layer comprises a KSF phosphor;
• and
• an isolation layer, disposed in the dam and covering the KSF phosphor based layer;
• wherein the KSF phosphor based layer comprises a plurality of KSF phosphor based structures corresponding to the plurality of first photoelectric elements, each of the plurality of KSF phosphor based structures covers an upper surface of a corresponding one of the plurality of first photoelectric elements facing away from the metallic substrate and further extends from the upper surface to a side surface of the corresponding one first photoelectric element to thereby cover the side surface of the corresponding one first photoelectric element;
• and
• wherein the isolation layer is filled between each of the plurality of KSF phosphor based structures and the metallic substrate.