Optoelectronic semiconductor component comprising connection regions, and method for producing the optoelectronic semiconductor component

A method for manufacturing an optoelectronic semiconductor device, comprising:

• forming a first semiconductor layer stack comprising a first semiconductor layer of a first conductivity type, wherein a layer which is directly adjacent to a first main surface of the first semiconductor layer stack is epitaxial,
• forming a second semiconductor layer of a second conductivity type, wherein a layer which is directly adjacent to a first main surface of the first semiconductor layer stack is epitaxial,
• forming a first contact element and a second contact element,
• wherein the first semiconductor layer stack and the second semiconductor layer are arranged one above the other,
• the second semiconductor layer is electrically connected to the second contact element, and
• wherein part of the first main surface of the first semiconductor layer stack is directly adjacent to the first contact element and the method further comprises
• patterning a part of the first main surface of the first semiconductor layer stack, so that a plurality of protruding regions and a plurality of connecting regions are formed, the connecting regions being directly adjacent to regions in which a part of the first main surface of the first semiconductor layer stack is directly adjacent to the first contact element, the connecting regions having a lateral extension which is greater than 5 times the mean lateral extension of the protruding regions,
• wherein at least one of the connecting regions is a light emitting region that is not covered with a conductive material.

An optoelectronic semiconductor device comprising:

• a first semiconductor layer stack comprising a first semiconductor layer of a first conductivity type and an epitaxial connecting layer which is directly adjacent to a first main surface of the first semiconductor layer stack,
• the optoelectronic semiconductor device further comprising a second semiconductor layer of a second conductivity type,
• a first contact element and a second contact element,
• wherein the first semiconductor layer stack and the second semiconductor layer are arranged one above the other,
• the second semiconductor layer is electrically connected to the second contact element, and
• wherein part of a first main surface of the first semiconductor layer stack is directly adjacent to the first contact element, and part of the first main surface of the first semiconductor layer stack is patterned so that a plurality of protruding regions and a plurality of connecting regions are formed,
• part of that part of the first main surface that is patterned is not directly adjacent to the first contact element and represents a light emitting region, and
• the connecting regions extend from the first contact element into the light emitting region, respectively, and at least one of the connection regions represents a light-emitting region that is not covered with a conductive material.