Nitride semiconductor light emitting element and method of manufacturing same

A nitride semiconductor light emitting element comprising:

• an n-side nitride semiconductor layer;
• a p-side nitride semiconductor layer;
• and
• an active layer disposed between the n-side nitride semiconductor layer and the p-side nitride semiconductor layer, wherein:
• the active layer includes a plurality of well layers and a plurality of barrier layers,
• the plurality of well layers include a plurality of first well layers, and a plurality of second well layers positioned closer to the p-side nitride semiconductor layer than the first well layers,
• at least one of the plurality of barrier layers positioned between the first well layers includes a first barrier layer containing an n-type impurity, and a second barrier layer, wherein a concentration of the n-type impurity in the second barrier layer located between the first well layers is lower than a concentration of the n-type impurity in the first barrier layer located between the first well layers, and wherein the second barrier layer located between the first well layers is positioned closer to the p-side nitride semiconductor layer than the first barrier layer located between the first well layers,
• at least one of the plurality of barrier layers positioned between the second well layers includes a first barrier layer containing an n-type impurity, and a second barrier layer, wherein a concentration of the n-type impurity in the second barrier layer located between the second well layers is lower than a concentration of the n-type impurity in the first barrier layer located between the second well layers, and wherein the second barrier layer located between the second well layers is positioned closer to the p-side nitride semiconductor layer than the first barrier layer located between the second well layers,
• the n-type impurity concentration of the first barrier layer positioned between the first well layers is higher than the n-type impurity concentration of the first barrier layer positioned between the second well layers, and
• an n-type impurity concentration difference between the first barrier layer and the second barrier layer positioned between the first well layers is greater than an n-type impurity concentration difference between the first barrier layer and the second barrier layer positioned between the second well layers.