Semiconductor element and semiconductor device

Abstract

Inhibition of movement of charges in a semiconductor element formed by growing a group III-V compound semiconductor layer on a silicon substrate is prevented. The semiconductor element includes a silicon substrate, a first compound semiconductor layer, a second compound semiconductor layer, and an electrode. The first compound semiconductor layer is formed on the silicon substrate. The second compound semiconductor layer is stacked on the first compound semiconductor layer. The electrode is disposed on the silicon substrate and controls movement of charges between the silicon substrate and the second compound semiconductor layer via the first compound semiconductor layer.

Dependencies are inferred from the claim text.