Light emitting element, manufacturing method for light emitting element, and display device including the same

A method of manufacturing a light emitting element, comprising:

• preparing a stacked substrate;
• forming a sacrificial layer on the stacked substrate;
• forming a first semiconductor layer including a first type of semiconductor on the sacrificial layer;
• forming an active layer on the first semiconductor layer;
• forming a second semiconductor layer including a second type of semiconductor on the active layer;
• performing an etching process in a direction from the second semiconductor layer toward the first semiconductor layer to remove at least a part of each of the first semiconductor layer, the active layer, and the second semiconductor layer;
• and
• separating at least a portion of the first semiconductor layer from the sacrificial layer,
• wherein
• the etching process is performed such that an area of an etched region decreases as an etching depth increases,
• the light emitting element has an n-polygonal shape (n is an integer of 3 or more) in which a surface has a first area, and another surface has an n-polygonal shape having a second area larger than the first area, and
• a distance between the surface and the another surface satisfies the following equation:
• h≤√{square root over (x×y)}, where h is the distance, x is a diameter of an inscribed circle with respect to the another surface, and y is a diameter of a circumscribed circle with respect to the another surface.

A display device comprising:

• a substrate;
• a light emitting element including:
• a first surface corresponding to an end of the light emitting element;
• a second surface corresponding to another end of the light emitting element;
• a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor;
• a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor;
• a transparent electrode between the second semiconductor layer and the second surface;
• and
• an active layer disposed between the first semiconductor layer and the second semiconductor layer;
• a first electrode disposed on the substrate and electrically connected to the light emitting element through the second surface;
• a second electrode disposed on the substrate and electrically connected to the light emitting element through the first surface;
• and
• an insulating film that overlaps the first semiconductor layer, the active layer, the second semiconductor layer, and the transparent electrode so that sides of the first semiconductor layer, the active layer, and the second semiconductor layer, and the transparent electrode are prevented from being exposed to the outside, wherein
• a thickness of the insulating film is from about 10 nm to about 200 nm,
• an area of the first surface is larger than an area of the second surface,
• a distance between the first surface and the second surface is shorter than a length defined by the first surface,
• the first electrode is disposed between the substrate and the second electrode,
• the first surface physically contacts at least a part of the second electrode,
• the second surface includes the area smaller than the area of the first surface and physically contacts at least a part of the first electrode,
• the first surface and the second surface each have an n-polygonal shape (n is an integer of 3 or more), and
• the length defined by the first surface is defined by the following equation:
• L=√{square root over (x×y)}, where L is the length defined by the first surface, x is a diameter of an inscribed circle with respect to the first surface, and y is a diameter of a circumscribed circle with respect to the first surface.