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US 12,191,410 B2Granted
Multijunction solar cells and multicolor photodetectors having an integrated edge filter
AssigneeCactus Materials, Inc.
InventorsDing Ding, Philip Dowd
Life of this patent
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Abstract
Semiconductor devices comprising a semiconductor edge filter, a first light absorbing region overlying the semiconductor edge filter and a second light absorbing region underlying the semiconductor edge filter are disclosed. The semiconductor edge filter has a high reflectivity over a first wavelength range absorbed by the overlying light absorbing region and a high transmission over a second wavelength range absorbed by the underlying light absorbing region.
Claims16
A semiconductor structure comprising:
- a semiconductor edge filter comprising a plurality of layers, wherein:
- each layer of the plurality of layers has a non-periodic optical thickness, a plurality of layer pairs are formed by the plurality of layers, the optical thickness of each layer pair of the plurality of layer pairs is different from the optical thickness of its adjacent layer pairs of the plurality of layer pairs, and adjacent layers of each layer pair of the plurality of layer pairs are characterized by a different refractive index;
- a first light absorbing region overlying the semiconductor edge filter having a first bandgap and a first absorption spectrum;
- and
- a second light absorbing region underlying the semiconductor edge filter having a second bandgap and a second absorption spectrum.
2 more elements
Dependencies are inferred from the claim text.