Manufacturing method for semiconductor structure having a plurality of fins

A method, comprising:

• forming a semiconductor stack;
• forming a plurality of fins from the semiconductor stack by a first etching operation, each of the plurality of fins comprising a first portion and a second portion over the first portion, the first portion being separated from the second portion;
• forming a first spacer and a second spacer, wherein each of the first spacer and the second spacer is in contact with the first portion and the second portion, and the first spacer and the second spacer are separated from each other;
• and
• forming a metal gate having an upper portion and a bottom portion, wherein the bottom portion of the metal gate is formed in a space between the first spacer and the second spacer, and the upper portion of the metal gate is formed over the second portion of each of the plurality of fins.

A method, comprising:

• forming a semiconductor fin having a first portion and a second portion over the first portion;
• forming an insulating region having a bottom portion and an upper portion;
• and
• forming a metal gate having a bottom portion and an upper portion, wherein the bottom portion of the insulating region is between the first portion and the second portion, and the upper portion of the metal gate and the upper portion of the insulating region are over the second portion, wherein the bottom portion of the insulating region and the bottom portion of the metal gate are between the first portion and the second portion, the bottom portion of the metal gate is surrounded by the bottom portion of the insulating region,
• wherein a width of the metal gate is smaller than a width of the second portion.