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US 12,191,392 B2Granted
Semiconductor device including two-dimensional material
AssigneeSamsung Electronics Co., Ltd.
InventorsVan Luan Nguyen, Minsu Seol, Eunkyu Lee, Junyoung Kwon, Hyeonjin Shin, Minseok Yoo
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Abstract
A semiconductor device according to an embodiment may include a substrate, an adhesive layer, and a semiconductor layer. The semiconductor layer includes a 2D material having a layered structure. The adhesive layer is interposed between the substrate and the semiconductor layer, and has adhesiveness to a 2D material.
Claims20
A semiconductor device comprising:
- a substrate;
- a semiconductor layer comprising a two-dimensional (2D) material having a layered structure;
- an adhesive layer adhering the substrate to the semiconductor layer;
- and
- an electrode spaced apart from the semiconductor layer such that an insulator separates the electrode and the semiconductor layer and such that the electrode corresponds to a channel region in the semiconductor layer, and
- wherein an adhesive energy between the adhesive layer and the 2D material is two or more times greater than an adhesive energy between the substrate and the 2D material.
3 more elements
A semiconductor device comprising:
- a substrate;
- a channel layer including a 2D material;
- an adhesive layer adhering the substrate to the channel layer, wherein an adhesive energy between the adhesive layer and the 2D material is two or more times greater than an adhesive energy between the substrate and the 2D material;
- a source electrode in contact with the channel layer;
- a drain electrode in contact with the channel layer and separated from the source electrode;
- and
- a gate electrode separated from the channel layer.
4 more elements
Dependencies are inferred from the claim text.