Semiconductor device having a current spreading region

Abstract

A semiconductor device includes: a semiconductor substrate; a drift zone of a first conductivity type in the semiconductor substrate; an array of interconnected gate trenches extending from a first surface of the semiconductor substrate into the drift zone; a plurality of semiconductor mesas delimited by the array of interconnected gate trenches; a plurality of needle-shaped field plate trenches extending from the first surface into the plurality of semiconductor mesas; in the plurality of semiconductor mesas, a source region of the first conductivity type and a body region of a second conductivity type separating the source region from the drift zone; and a current spreading region of the first conductivity type at the bottom of the gate trenches and having a higher average doping concentration than the drift zone. Methods of producing the semiconductor device are also described.

Dependencies are inferred from the claim text.