Fin field effect transistor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTa-Chun Ma, Yee-Chia Yeo
Life of this patent
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Abstract
A fin field effect transistor device structure includes a fin structure formed over a substrate. The structure also includes a liner layer and an isolation structure surrounding the fin structure. The structure also includes a gate dielectric layer formed over the fin structure and the isolation structure. The structure also includes a gate structure formed over the gate dielectric layer. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The fin structure includes a protruding portion laterally extending over the liner layer.
Claims20
A fin field effect transistor device structure, comprising:
- a fin structure formed over a substrate;
- a liner layer and an isolation structure surrounding the fin structure;
- a gate dielectric layer formed over the fin structure and the isolation structure;
- a gate structure formed over the gate dielectric layer;
- and
- source/drain epitaxial structures formed on opposite sides of the gate structure;
- wherein the fin structure comprises a protruding portion laterally extending over the liner layer.
A fin field effect transistor device structure, comprising:
- a fin structure formed over a substrate;
- a liner layer and an isolation structure surrounding a doped portion of the fin structure, wherein the doped portion of the fin structure has a higher dopant concentration than a top portion of the fin structure;
- a cap layer covering the fin structure and the liner layer;
- and
- a gate structure, comprising a gate dielectric and a gate electrode, covering the cap layer and the isolation structure,
- wherein the cap layer and the fin structure are made of a same semiconductor material.
A fin field effect transistor device structure, comprising:
- a fin structure comprising a cap layer formed over a substrate, wherein the cap layer is a semiconductor material;
- a liner layer and an isolation structure surrounding a doped portion of the fin structure;
- and
- a gate structure formed over the fin structure and the isolation structure,
- wherein the fin structure is over the liner layer, and a bottommost surface of the cap layer extends along a top surface of the liner layer.
Dependencies are inferred from the claim text.